Nonvolatile memory device and method of fabricating the same

Details Nonvolatile memory device and method of fabricating the same Nonvolatile memory device and method of fabricating the same

2011-08-09

2011-08-09

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S591000, C257SE21422, C257SE21662, C257SE21680

Reexamination Certificate

active

07994003

ABSTRACT:
A method of fabricating a nonvolatile memory device includes forming a tunnel insulating layer on a semiconductor substrate, forming a charge storage layer on the tunnel insulating layer, forming a dielectric layer on the charge storage layer, the dielectric layer including a first aluminum oxide layer, a silicon oxide layer, and a second aluminum oxide layer sequentially stacked on the charge storage layer, and forming a gate electrode on the dielectric layer, the gate electrode directly contacting the second aluminum oxide layer of the dielectric layer.

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