Nonvolatile memory device and manufacturing method thereof

Details Nonvolatile memory device and manufacturing method thereof Nonvolatile memory device and manufacturing method thereof

1996-11-27

1998-08-04

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438266, 438258, H01L 21336

Patent

active

057892938

ABSTRACT:
A nonvolatile memory device and a manufacturing method thereof is disclosed. The device includes a gate electrode of a memory cell arranged in a memory cell region and having a floating gate electrode formed of a first conductive layer, an insulating film formed on the floating gate electrode and a control gate electrode formed of a second conductive layer on the insulating film; a gate electrode formed of a second conductive layer and arranged in a peripheral circuit region surrounding the memory cell region; a resistance device formed of the first conductive layer arranged in a boundary region between the memory cell region and the peripheral circuit region and/or the peripheral circuit region; an insulating film formed on a part of a surface of the resistance device; and a capping layer formed of the second conductive layer on the insulating film. Thus, generation of a stringer can be prevented so that malfunction of a device can be prevented.

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patent: 5506159 (1996-04-01), Enomoto
patent: 5518947 (1996-05-01), Noda
patent: 5538912 (1996-07-01), Kunori et al.

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