Nonvolatile memory device and manufacturing method thereof

Details Nonvolatile memory device and manufacturing method thereof Nonvolatile memory device and manufacturing method thereof

1997-04-03

1998-08-11

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, H01L 21336

Patent

active

057926964

ABSTRACT:
A nonvolatile memory device and a manufacturing method thereof are provided. The nonvolatile memory device includes memory cells which are formed in a cell array region, peripheral circuit devices which are formed in a peripheral circuit region at the periphery of the cell array region, a field oxide film which is formed between the cell array region and the peripheral circuit region, and a dummy conductive pattern which is formed along and on the field oxide film. Accordingly, damage to the substrate formed between the peripheral circuit region and the cell array region can be reduced, thus a characteristic of insulation between devices can be enhanced.

REFERENCES:
patent: 4326331 (1982-04-01), Guterman
patent: 4910566 (1990-03-01), Ema
patent: 5026657 (1991-06-01), Lee et al.
patent: 5284786 (1994-02-01), Sethi
patent: 5432109 (1995-07-01), Yamada
patent: 5635416 (1997-06-01), Chen et al.
patent: 5656527 (1997-08-01), Choi et al.

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