Nonvolatile memory cells having high control gate coupling...

Details Nonvolatile memory cells having high control gate coupling... Nonvolatile memory cells having high control gate coupling...

2008-05-13

2008-05-13

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S593000

Reexamination Certificate

active

07371638

ABSTRACT:
A non-volatile memory cell includes a semiconductor substrate having a fin-shaped active region extending therefrom. A tunnel dielectric layer is provided, which extends on opposing sidewalls and an upper surface of the fin-shaped active region. A floating gate electrode is provided on the tunnel dielectric layer. This floating gate electrode has at least a partial groove therein. An inter-gate dielectric layer is also provided. This inter-gate dielectric layer extends on the floating gate electrode and into the at least a partial groove. A control gate electrode is provided, which extends on the inter-gate dielectric layer and into the at least a partial groove.

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