Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309, C257SE27102
Reexamination Certificate
active
08008710
ABSTRACT:
A memory string has a semiconductor layer with a joining portion that is formed to join a plurality of columnar portions extending in a vertical direction with respect to a substrate and lower ends of the plurality of columnar portions. First conductive layers are formed in a laminated fashion to surround side surfaces of the columnar portions and an electric charge storage layer, and function as control electrodes of memory cells. A second conductive layer is formed around the plurality of columnar portions via a gate insulation film, and functions as control electrodes of selection transistors. Bit lines are formed to be connected to the plurality of columnar portions, respectively, with a second direction orthogonal to a first direction taken as a longitudinal direction.
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Aochi Hideaki
Fukuzumi Yoshiaki
Ishiduki Megumi
Katsumata Ryota
Kidoh Masaru
Dang Trung
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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