Non-volatile semiconductor memory devices using prominences...

Details Non-volatile semiconductor memory devices using prominences... Non-volatile semiconductor memory devices using prominences...

2007-12-18

2007-12-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S506000, C257SE21170, C257SE21051, C257SE21400, C257SE21320, C257SE21249, C257SE21655

Reexamination Certificate

active

11303360

ABSTRACT:
A semiconductor substrate is patterned to form a depression and prominence. A floating gate is formed so as to cover at least both sidewalls of the prominence of the depression and prominence, and is then etched to form a trench for a device isolation self-aligned with the floating gate. Related structures are also described.

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