Non-volatile semiconductor memory devices having...

Details Non-volatile semiconductor memory devices having... Non-volatile semiconductor memory devices having...

2006-11-07

2006-11-07

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C257S315000

Reexamination Certificate

active

07132331

ABSTRACT:
A semiconductor device having a self-aligned gate conductive layer and a method of fabricating the same are disclosed. In embodiments of the present invention, a plurality of field isolation patterns are formed on a semiconductor substrate to define a plurality of active regions in the semiconductor substrate. The density of the field isolation patterns is then increased by, for example, a thermal annealing process. A plurality of gate insulation patterns are then formed on respective of the active regions. A plurality of first conductive patterns are then formed on respective of the gate insulation patterns.

REFERENCES:
patent: 6187651 (2001-02-01), Oh
patent: 6620681 (2003-09-01), Kim et al.
patent: 6743675 (2004-06-01), Ding
patent: 2003/0119260 (2003-06-01), Kim et al.
patent: 2003/0203594 (2003-10-01), Shimizu et al.
patent: 2004/0201058 (2004-10-01), Sonoda et al.
patent: 09-321132 (1997-12-01), None
patent: 11-176962 (1999-07-01), None
patent: 2000-200841 (2000-07-01), None
patent: 0100589456 (2001-06-01), None
patent: 10-2003-0028596 (2003-04-01), None
patent: 1020030056388 (2003-04-01), None
patent: 10-2003-0053314 (2003-06-01), None
Office Action for Korean patent application No. 2003-94000 completed on Oct. 31, 2005.

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