Non-volatile semiconductor memory device and method of...

Details Non-volatile semiconductor memory device and method of... Non-volatile semiconductor memory device and method of...

2011-08-30

2011-08-30

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S316000

Reexamination Certificate

active

08008149

ABSTRACT:
A non-volatile semiconductor memory device comprises a plurality of memory cells, each including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a floating gate formed on the semiconductor substrate with the inclusion of the first insulating film, a second insulating film formed on the floating gate, and a control gate formed on the floating gate with the inclusion of the second insulating film; an element isolation insulating film formed in the semiconductor substrate and extending in a gate-length direction to isolate between memory cells adjoining in a gate-width direction; and an air gap formed on the element isolation insulating film and between floating gates adjoining in the gate-width direction.

REFERENCES:
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Daewoong Kang, et al., “Improving the Cell Characteristics Using Low-k Gate Spacer in 1Gb NAND Flash Memory”, 2006 IEEE Dig., pp. 1001-1004, Dec. 2006.

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