Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1994-06-07

1995-09-26

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Precharge

365204, 3652335, G11C 700

Patent

active

054539552

ABSTRACT:
A non-volatile semiconductor memory device includes read charging transistors for setting bit lines at a predetermined read potential to perform a data read operation, and read discharging transistors for setting non-selected bit lines at the ground potential during the read operation. These transistors are controlled by different control signals, obtained by detecting an address change, for every other bit line in accordance with an input address so that the read discharging transistors are kept ON to set the non-selected bit lines at the ground potential before and during the data read operation.

REFERENCES:
patent: 4612631 (1986-09-01), Ochii
patent: 4730279 (1988-03-01), Ohtani
patent: 4980861 (1990-12-01), Herdt et al.
4-Mbit NAND-EEPROM, Ryouhei Kirisawa, et al., pp. 997-1000.
4-Mbit NAND-EEPROM with Tight Programmed VT Distribution, Tomoharu Tanaka, et al., pp. 105-106.

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