Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1984-12-14

1987-05-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576C, 29577C, 29578, 357 2315, 427 93, 148DIG14, 148DIG43, 148DIG81, 148DIG118, 148DIG147, H01L 21312

Patent

active

046656081

ABSTRACT:
A method of manufacturing a semiconductor device comprises a step of preparing a semiconductor substrate (12) having a surface layer of silicon, a step of forming a conductive thin film (14) of a silicide composed of a metal having a high melting point and silicon on the semiconductor substrate (12), a step of forming an oxidation-resistant mask (18) on a first portion (14a) of the conductive thin film (14) and a step of converting a second, exposed, portion (19) of the conductive thin film (14) into an insulating film (19a) of a composite oxide composed of silicon oxide and an oxide of the subject metal by oxidizing the exposed portion (19) while maintaining the first portion (14a) of the conductive thin film (14) covered by the mask (18).

REFERENCES:
patent: 3614548 (1971-10-01), Inoue
patent: 4285761 (1981-08-01), Fatula, Jr. et al.
patent: 4419142 (1983-12-01), Matsukawa
patent: 4432006 (1984-02-01), Takei
Murarka, S. P., "Refractory Silicides for Integrated Circuits" in J. Vac. Sci. Technol. 17(4), Jul./Aug. 1980, pp. 775-792.
Laibowitz, R. B., "Fabrication of Vias in a Multilayered Metallization in LSI Technology" in IBM Tech. Disc. Bull. 21(12), May 1979, pp. 5051-5052.

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