Non-volatile semiconductor memory and method of making same,...

Details Non-volatile semiconductor memory and method of making same,... Non-volatile semiconductor memory and method of making same,...

2007-03-27

2007-03-27

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21684

Reexamination Certificate

active

10851350

ABSTRACT:
A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistor can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

REFERENCES:
patent: 5032881 (1991-07-01), Sardo et al.
patent: 5282160 (1994-01-01), Yamagata
patent: 5306940 (1994-04-01), Yamazaki
patent: 5316965 (1994-05-01), Philipossian et al.
patent: 5427966 (1995-06-01), Komori et al.
patent: 5559048 (1996-09-01), Inoue
patent: 5666311 (1997-09-01), Mori
patent: 5740105 (1998-04-01), Gill
patent: 5773861 (1998-06-01), Chen et al.
patent: 5889698 (1999-03-01), Miwa et al.
patent: 5946548 (1999-08-01), Hashimoto et al.
patent: 5994756 (1999-11-01), Umezawa et al.
patent: 6168994 (2001-01-01), Ikeda
patent: 6211021 (2001-04-01), Wang et al.
patent: 6287939 (2001-09-01), Huang et al.
patent: 2001/0002714 (2001-06-01), Doan
patent: 62-52971 (1987-03-01), None
patent: 02-173651 (1989-07-01), None
patent: 2-25069 (1990-01-01), None
patent: 2-72672 (1990-03-01), None
patent: 4-229655 (1992-08-01), None
patent: 05-47918 (1993-02-01), None
patent: 7-142618 (1995-06-01), None
patent: 7-147389 (1995-06-01), None
patent: 7-201189 (1995-08-01), None
patent: 8-17948 (1996-01-01), None
patent: HEI 8 (1996)-17948 (1996-01-01), None
patent: 8-51108 (1996-02-01), None
patent: 8-107158 (1996-04-01), None
patent: 8-148658 (1996-06-01), None
patent: 8-172174 (1996-07-01), None
patent: 08-213572 (1996-08-01), None
patent: 08-298314 (1996-11-01), None
patent: 09-008156 (1997-01-01), None
patent: WO 96/24138 (1996-08-01), None
patent: PCT-JP-98-00710 (1998-10-01), None
K. Shimizu, et al., “A Novel High-Density 5F2NAND STI Cell Technology Suitable for 256Mbit and IGbit Flash Memories”, IEDM 1997, Microelectronics Engineering Laboratory, pp. 271-274.
K. Kim, et al., A Novel Dual StringNOR(DuSNOR) Memory Cell Technology Scalable to the 256 Mbit and 1Gbit Flash Memories, IEDM 1995, pp. 263-266.
S. Aritome, et al. A 0.67 um2Self-Aligned Shallow Trench Isolation Cell (SA-STI CELL) For 3V-only 256 Mbit NAND EEPROMs, ULSI Research Laboratories, IEEE 1994, pp. 3.6.1-3.6.4.
Japanese Official Action, For Application No. 2005-329722, with a preparation date of Feb. 16, 2006 and a mailing date of Feb. 21, 2006.
Japanese Offical Action for Application No. 2005-329722, with a preparation date of Jun. 2, 2006 and a mailing date of Jun. 6, 2006.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory and method of making same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory and method of making same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory and method of making same,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3722325