Non-volatile memory technology compatible with 1T-RAM process

Details Non-volatile memory technology compatible with 1T-RAM process Non-volatile memory technology compatible with 1T-RAM process

2005-06-07

2005-06-07

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S353000, C438S359000

Reexamination Certificate

active

06902975

ABSTRACT:
Methods of fabricating memory devices having non-volatile and volatile memory are provided. A substrate is provided, wherein the substrate has a non-volatile memory region and a volatile memory region. The non-volatile memory region has a storage device, such as a split-gate transistor, that is fabricated in substantially the same process steps as a storage capacitor of the volatile memory region. The reduction of process steps allow mixed memory to be fabricated in a cost effective manner.

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