Non-volatile memory devices that include a selection...

Details Non-volatile memory devices that include a selection... Non-volatile memory devices that include a selection...

2004-12-22

2009-06-16

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S296000, C257SE29129, C257SE27103, C365S185010, C365S185070, C365S185110

Reexamination Certificate

active

07547943

ABSTRACT:
A NAND-type non-volatile memory device includes a substrate and a device isolation layer disposed on the substrate to define an active region. First and second selection transistors are disposed in the active region, such that each of the first and second selection transistors has a recessed channel. A plurality of memory transistors is disposed in the active region between the first selection transistor and the second selection transistor.

REFERENCES:
patent: 4964080 (1990-10-01), Tzeng
patent: 5677556 (1997-10-01), Endoh
patent: 2005/0082600 (2005-04-01), Hsu et al.
patent: 2005/0265076 (2005-12-01), Forbes
patent: 61-088059 (1987-10-01), None
patent: 03023674 (1991-01-01), None
patent: 02-193154 (1992-03-01), None
patent: 10-2003-7000786 (2003-02-01), None

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