Non-volatile memory devices and methods of fabricating the same

Details Non-volatile memory devices and methods of fabricating the same Non-volatile memory devices and methods of fabricating the same

2011-05-03

2011-05-03

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C438S142000, C438S003000, C438S093000, C257S002000, C257SE21086, C257SE43001, C257SE31029

Reexamination Certificate

active

07936044

ABSTRACT:
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.

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