Non-volatile memory device with increased reliability

Details Non-volatile memory device with increased reliability Non-volatile memory device with increased reliability

2007-07-03

2007-07-03

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C257S315000

Reexamination Certificate

active

11063560

ABSTRACT:
A memory device may include a number of memory cells, a first interlayer dielectric formed over the memory cells and at least one metal layer formed over the interlayer dielectric. A dielectric layer may be formed over the metal layer. The dielectric layer may represent a cap layer formed at or near an upper surface of the memory device and may be deposited at a relatively low temperature.

REFERENCES:
patent: 4833096 (1989-05-01), Huang et al.

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