Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-12-21
2010-11-02
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185180, C365S185170
Reexamination Certificate
active
07826276
ABSTRACT:
Provided are a non-volatile memory device in which time required for programming may be saved, and a method of driving the same. The non-volatile memory device may include a memory cell array with a plurality of memory cells; an input/output buffer having a storage unit that stores data and indicator bits representing information regarding the data; a data scanning unit that receives the stored data from the input/output buffer in units of scanning, and that scans the received data, the received data being selectively programmed in the memory cells according to a result of scanning the data; and/or a control logic unit that controls the data stored in the input/output buffer in units of scanning to be selectively supplied to the data scanning unit based on the states of the indicator bits.
REFERENCES:
patent: 7525850 (2009-04-01), Chae et al.
patent: 2006-048779 (2006-02-01), None
patent: 10-0568117 (2006-03-01), None
patent: 1020060028983 (2006-04-01), None
patent: 1020060032507 (2006-04-01), None
patent: 1020060056486 (2006-05-01), None
Lim Bong-soon
Park Jae-Woo
Harness & Dickey & Pierce P.L.C.
Hoang Huan
Samsung Electronics Co,. Ltd.
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