Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-25
2011-01-25
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309
Reexamination Certificate
active
07875921
ABSTRACT:
A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.
REFERENCES:
patent: 6838726 (2005-01-01), Forbes et al.
patent: 2002/0175364 (2002-11-01), Ichige et al.
patent: 2002/0191453 (2002-12-01), Owa
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 2005/0018468 (2005-01-01), Honda
patent: 2005/0202632 (2005-09-01), Ding
patent: 2006/0006492 (2006-01-01), Shimizu
patent: 2006/0068546 (2006-03-01), Chang
patent: 2006/0068574 (2006-03-01), Lin et al.
patent: 2006/0084702 (2006-04-01), Asano et al.
patent: 2006/0124988 (2006-06-01), Hur et al.
patent: 2006/0145192 (2006-07-01), Van Duuren et al.
patent: 2006/0214219 (2006-09-01), Choi et al.
patent: 2003-258128 (2003-09-01), None
patent: 2004-47936 (2004-02-01), None
patent: 10-2004-0072342 (2004-08-01), None
“Non-Volatile Memory Device for 2-Bit Operation and Method of Fabricating the Same” Specification, Drawings, and Prosecution History of U.S. Appl. No. 11/376,518, filed Mar. 15, 2006 by Byung-yong Choi, et al., which is stored in the United States Patent and Trademark Office (USPATO) Image File Wrapper (IFW) system.
Cho Hye-jin
Choi Byung-yong
Kim Yun-gi
Lee Choong-ho
Lee Young-mi
Anya Igwe U
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Zarneke David A
LandOfFree
Non-volatile memory device for 2-bit operation and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory device for 2-bit operation and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device for 2-bit operation and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2625376