Non-volatile memory device and method of manufacturing the same

Details Non-volatile memory device and method of manufacturing the same Non-volatile memory device and method of manufacturing the same

2008-05-13

2009-11-10

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C257SE21179

Reexamination Certificate

active

07615437

ABSTRACT:
A method of manufacturing a non-volatile memory device includes sequentially depositing a first insulation layer, a charge storage layer, and a second insulation layer on a substrate, forming a first opening through the resultant structure to expose the substrate, forming second and third openings through the second insulation layer to form a second insulation layer pattern, forming a conductive layer on the second insulation layer pattern, forming a photoresist pattern structure on the conductive layer, and forming simultaneously a common source line, at least one ground selection line, at least one string selection line, and a plurality of gate structures on the substrate by etching through the photoresist pattern structure, wherein the common source line and the gate structures are formed simultaneously on a substantially same level and of substantially same components.

REFERENCES:
patent: 6953965 (2005-10-01), Goda et al.
patent: 7344944 (2008-03-01), Park et al.
patent: 2006/0231822 (2006-10-01), Kim
patent: 2004-014783 (2004-01-01), None
patent: 10-2006-0093160 (2006-08-01), None
patent: 10-0614657 (2006-08-01), None

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