Non-volatile memory device and method of manufacturing same

Details Non-volatile memory device and method of manufacturing same Non-volatile memory device and method of manufacturing same

2009-08-11

2011-11-08

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S320000, C257SE21209, C257SE21210

Reexamination Certificate

active

08053302

ABSTRACT:
A non-volatile memory device and a method of manufacturing the non-volatile memory device are provided. At least one first semiconductor layer and at least one second semiconductor layer are disposed. At least one control gate electrode is disposed between the at least one first semiconductor layer and the at least one second semiconductor layer. At least one first layer selection line is capacitively coupled to the at least one first semiconductor layer. At least one second layer selection line is capacitively coupled to the at least one second semiconductor layer.

REFERENCES:
patent: 2007/0020853 (2007-01-01), Gao et al.
patent: 2007/0158736 (2007-07-01), Arai et al.
patent: 2008/0073635 (2008-03-01), Kiyotoshi et al.
patent: 2009/0001419 (2009-01-01), Han et al.
patent: 2008-078404 (2008-04-01), None
patent: 10-0855990 (2008-08-01), None
patent: 10-2008-0096734 (2008-11-01), None

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