Non-volatile memory device and manufacturing method thereof

Details Non-volatile memory device and manufacturing method thereof Non-volatile memory device and manufacturing method thereof

2005-05-17

2005-05-17

Whitehead, Jr., Carl (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S260000

Reexamination Certificate

active

06893922

ABSTRACT:
A non-volatile memory device and a manufacturing method thereof are disclosed. The non-volatile memory device includes a gate insulating film formed on a semiconductor substrate, a floating gate formed on the gate insulating film, a dielectric film comprising a (TaO)1−x(TiO)xN film on the floating gate, and a control gate formed on the dielectric film. Thus, large charge capacitance values can be obtained compared to a similarly sized device using an ONO or Ta2O5thin film dielectric while simultaneously simplifying the manufacturing process.

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