Non-volatile memory device and fabrication method thereof

Details Non-volatile memory device and fabrication method thereof Non-volatile memory device and fabrication method thereof

2006-11-27

2009-06-30

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S264000, C438S257000, C438S301000, C438S778000, C257SE21180, C257SE21210, C257SE21423

Reexamination Certificate

active

07553720

ABSTRACT:
A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

REFERENCES:
patent: 6365320 (2002-04-01), Foote et al.
patent: 7119865 (2006-10-01), Yang et al.
patent: 2001/0004537 (2001-06-01), Lee
patent: 2002/0163032 (2002-11-01), Lin et al.
patent: 2004/0053468 (2004-03-01), Dong et al.
patent: 2005/0037550 (2005-02-01), Kang et al.
patent: 2007/0029625 (2007-02-01), Lue et al.
patent: 2001-0092958 (2001-10-01), None

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