Non-destructive readout of ferroelectric memories

Details Non-destructive readout of ferroelectric memories Non-destructive readout of ferroelectric memories

2006-12-26

2006-12-26

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S185190, C365S189090, C365S207000

Reexamination Certificate

active

07154768

ABSTRACT:
A device and method of reading a ferroelectric memory, including providing a ferroelectric memory including a ferroelectric memory cell, a charge integrator, and a bit line connecting the ferroelectric memory cell and the charge integrator. Pulses are applied to the ferroelectric memory cell, where each of the pulses are of a value lower than that which will destroy data stored in the memory cell. Output voltage values from the ferroelectric memory cell are accumulated by the charge integrator in response to each pulse. The output of the charge integrator may be read to determine whether the datum value stored in the memory cell is a logic high or low value. In one embodiment, the output of the charge integrator is read at a predetermined time after starting the pulses.

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Hiroki Koike, et al.; “A 60-ns 1Mb Nonvolatile Ferroelectric Memory With A Nondrive Cell Plate Line Write/Read Scheme”; (copy of paper as submitted to the IEEE containing 15 pages); published in IEEE Journal of Solid State Circuits, vol. 31, No. 11, Nov. 1996.

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