Noble metal barrier and seed layer for semiconductors

Details Noble metal barrier and seed layer for semiconductors Noble metal barrier and seed layer for semiconductors

2005-03-31

2008-12-02

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C257SE21584

Reexamination Certificate

active

07459392

ABSTRACT:
A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region between the barrier and noble metal layers to prevent oxidation of the barrier layer.

REFERENCES:
patent: 6436816 (2002-08-01), Lee et al.
patent: 6632737 (2003-10-01), Hillman et al.
patent: 7144806 (2006-12-01), Fair et al.
patent: 2003/0203617 (2003-10-01), Lane et al.
patent: 2004/0009307 (2004-01-01), Koh et al.
patent: 2004/0241321 (2004-12-01), Ganguli et al.
patent: 2006/0063375 (2006-03-01), Sun et al.

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