Nitrogen-free dielectric anti-reflective coating and hardmask

Details Nitrogen-free dielectric anti-reflective coating and hardmask Nitrogen-free dielectric anti-reflective coating and hardmask

2006-09-12

2006-09-12

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S710000, C438S725000, C438S763000, C438S780000, C438S789000, C438S790000

Reexamination Certificate

active

07105460

ABSTRACT:
Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.

REFERENCES:
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5298587 (1994-03-01), Hu et al.
patent: 5494712 (1996-02-01), Hu et al.
patent: 5591566 (1997-01-01), Ogawa
patent: 5593741 (1997-01-01), Ikeda
patent: 5598027 (1997-01-01), Matsuura
patent: 5599740 (1997-02-01), Jang et al.
patent: 5616369 (1997-04-01), Williams et al.
patent: 5618619 (1997-04-01), Petrmichl et al.
patent: 5637351 (1997-06-01), O'Neal et al.
patent: 5638251 (1997-06-01), Goel et al.
patent: 5641607 (1997-06-01), Ogawa et al.
patent: 5679413 (1997-10-01), Petrmichl et al.
patent: 5683940 (1997-11-01), Yahiro
patent: 5693563 (1997-12-01), Teong
patent: 5700720 (1997-12-01), Hashimoto
patent: 5703404 (1997-12-01), Matsuura
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5753319 (1998-05-01), Knapp et al.
patent: 5753564 (1998-05-01), Fukada
patent: 5789319 (1998-08-01), Havemann et al.
patent: 5800877 (1998-09-01), Maeda et al.
patent: 5807785 (1998-09-01), Ravi
patent: 5821168 (1998-10-01), Jain
patent: 5834162 (1998-11-01), Malba
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5874367 (1999-02-01), Dobson
patent: 5888593 (1999-03-01), Petrmichl et al.
patent: 5891799 (1999-04-01), Tsui
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 6037274 (2000-03-01), Kudo et al.
patent: 6051321 (2000-04-01), Lee et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6054379 (2000-04-01), Yau et al.
patent: 6068884 (2000-05-01), Rose et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6080526 (2000-06-01), Yang et al.
patent: 6111698 (2000-08-01), Woodard et al.
patent: 6124641 (2000-09-01), Matsura
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6156874 (2000-12-01), Hu et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6176198 (2001-01-01), Kao et al.
patent: 6238751 (2001-05-01), Mountsier
patent: 6245690 (2001-06-01), Yau et al.
patent: 6252295 (2001-06-01), Cote et al.
patent: 6258735 (2001-07-01), Xia et al.
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6316063 (2001-11-01), Andideh et al.
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6340629 (2002-01-01), Yeo et al.
patent: 6348421 (2002-02-01), Shu et al.
patent: 6348725 (2002-02-01), Cheung et al.
patent: 6368924 (2002-04-01), Mancini et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6410462 (2002-06-01), Yang et al.
patent: 6410463 (2002-06-01), Matsuki
patent: 6413583 (2002-07-01), Moghadam et al.
patent: 6417098 (2002-07-01), Wong et al.
patent: 6432417 (2002-08-01), Mellul et al.
patent: 6437443 (2002-08-01), Grill et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6448176 (2002-09-01), Grill et al.
patent: 6448186 (2002-09-01), Olson et al.
patent: 6455445 (2002-09-01), Matsuki
patent: 6458720 (2002-10-01), Aoi
patent: 6462371 (2002-10-01), Weimer et al.
patent: 6472231 (2002-10-01), Gabriel et al.
patent: 6472264 (2002-10-01), Agarwal
patent: 6472317 (2002-10-01), Wang et al.
patent: 6479110 (2002-11-01), Grill et al.
patent: 6479407 (2002-11-01), Yokoyama et al.
patent: 6479408 (2002-11-01), Shioya et al.
patent: 6479409 (2002-11-01), Shioya et al.
patent: 6482731 (2002-11-01), Juengling
patent: 6482754 (2002-11-01), Andideh et al.
patent: 6485815 (2002-11-01), Jeong et al.
patent: 6489233 (2002-12-01), Chooi et al.
patent: 6492731 (2002-12-01), Catabay et al.
patent: 6497963 (2002-12-01), Grill et al.
patent: 6500772 (2002-12-01), Chakravarti et al.
patent: 6500773 (2002-12-01), Gaillard et al.
patent: 6511903 (2003-01-01), Yau et al.
patent: 6511909 (2003-01-01), Yau et al.
patent: 6514667 (2003-02-01), Angelopoulos et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6720251 (2004-04-01), Van Schravendijk et al.
patent: 6727456 (2004-04-01), Yasuno et al.
patent: 2001/0004479 (2001-06-01), Cheung et al.
patent: 2001/0005546 (2001-06-01), Cheung et al.
patent: 2001/0021590 (2001-09-01), Matsuki
patent: 2002/0055672 (2002-05-01), Zhang
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0076944 (2002-06-01), Wang et al.
patent: 2002/0098684 (2002-07-01), Li et al.
patent: 2002/0098714 (2002-07-01), Grill et al.
patent: 2002/0105084 (2002-08-01), Li
patent: 2002/0160604 (2002-10-01), Quek et al.
patent: 2002/0160626 (2002-10-01), Matsuki et al.
patent: 2002/0164891 (2002-11-01), Gates et al.
patent: 2002/0168870 (2002-11-01), Matsuki
patent: 2002/0172768 (2002-11-01), Laxman et al.
patent: 2002/0173157 (2002-11-01), Chang et al.
patent: 2002/0173172 (2002-11-01), Loboda et al.
patent: 2002/0177303 (2002-11-01), Jiang et al.
patent: 2002/0177329 (2002-11-01), Yang et al.
patent: 2002/0185741 (2002-12-01), Babich et al.
patent: 2002/0192982 (2002-12-01), Anidideh et al.
patent: 2002/0198353 (2002-12-01), Chen et al.
patent: 2003/0001239 (2003-01-01), Gallahger et al.
patent: 2003/0003765 (2003-01-01), Gibson, Jr. et al.
patent: 2003/0017718 (2003-01-01), Aoi
patent: 2003/0020108 (2003-01-01), Weimer et al.
patent: 2003/0064154 (2003-04-01), Laxman et al.
patent: 2003/0089988 (2003-05-01), Matsuura
patent: 2003/0111730 (2003-06-01), Takeda et al.
patent: 196 54 737 (1997-07-01), None
patent: 198 04 375 (1999-01-01), None
patent: 199 04 311 (1999-08-01), None
patent: 0 771 886 (1997-05-01), None
patent: 0 774 533 (1997-05-01), None
patent: 0 826 791 (1998-03-01), None
patent: 0 840 365 (1998-06-01), None
patent: 0 849 789 (1998-06-01), None
patent: 0 885 983 (1998-12-01), None
patent: 0 926 715 (1999-06-01), None
patent: 0 926 724 (1999-06-01), None
patent: 0 935 283 (1999-08-01), None
patent: 0 960 958 (1999-12-01), None
patent: 1 037 275 (2000-09-01), None
patent: 1 061 158 (2000-12-01), None
patent: 1 123 991 (2001-08-01), None
patent: 1 176 226 (2002-01-01), None
patent: 1 209 728 (2002-05-01), None
patent: 2 316 535 (1998-02-01), None
patent: 01-125193 (1989-05-01), None
patent: 09-008031 (1997-01-01), None
patent: 09-64029 (1997-03-01), None
patent: 09-237785 (1997-09-01), None
patent: 09-251997 (1997-09-01), None
patent: 09-260369 (1997-10-01), None
patent: 10/242143 (1998-09-01), None
patent: 11-251293 (1999-09-01), None
patent: 98/08249 (1998-02-01), None
patent: 98/59089 (1998-12-01), None
patent: 99/38202 (1999-07-01), None
patent: 99/55526 (1999-11-01), None
patent: 00/01012 (2000-01-01), None
patent: 00/19498 (2000-04-01), None
patent: 00/24050 (2000-04-01), None
patent: 01/01472 (2001-01-01), None
patent: 02/43119 (2002-05-01), None
U.S. patent application 10/375,852 filed on Feb. 25, 2003.
U.S. patent application 10/122,106 filed on Apr. 11, 2002.
U.S. patent application 09/627,667 filed on Jul. 28, 2000.
U.S. application 10/196,498 filed on Jul. 15, 2002 (AMAT/6084).
U.S. application 10/247,404 filed on Jun. 19, 2002 (AMAT/6084.P1).
U.S. application 10/096,503 filed on Mar. 12, 2002 (AMAT/6084.02).
PCT/International Search Report for US/02/40034 dated May 19, 2003.
Wu, et al “Advanced Metal Barrier Free Cu Damascene Interconnects with PECVD Silicon Carbide Barriers for 90/65-nm BEOL Technology”, 2002 IEEE, IEDM pp. 595-598.
Robles, et al. Characterization of High Density Plasma Chemical Vapor Deposited x-Carbon and X-Fluorinated Carbon Films for Ultra Low Dielectric Application, Feb. 10-11, 1997 DUMIC Conference, pp. 26-33.
Bar-Ilan, et al. A Comparative Study of Sub-Micro Gap Filling and Planarization Techniques, Tower Semiconductor Ltd., Israel, SPIE vol. 2636, pp. 277-288.
Hazari, et al., Characterization of Alternative Chemistries for Depositing PECVD Silicon Dioxide Films, Novellus Systems,

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