NH.sub.3 /N.sub.2 plasma treatment to enhance the adhesion of si

Details NH.sub.3 /N.sub.2 plasma treatment to enhance the adhesion of si NH.sub.3 /N.sub.2 plasma treatment to enhance the adhesion of si

1997-03-26

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

438221, 438798, 438424, 438296, 438435, 438786, H01L 2176

Patent

active

060966629

ABSTRACT:
A method of manufacturing a semiconductor device with improved adhesion between the local interconnect etch stop layer and the thermal oxide in an isolation region. The thermal oxide is treated with an NH.sub.3 /N.sub.2 plasma. The local interconnect etch stop layer is either silicon nitride or silicon oxynitride. A layer of a dielectric material such as PECVD SiO.sub.2 is formed on the local interconnect etch stop layer.

REFERENCES:
patent: 5464790 (1995-11-01), Hawley
patent: 5665635 (1997-09-01), Kwon et al.
patent: 5702977 (1997-12-01), Jang et al.
patent: 5726090 (1998-03-01), Jang et al.
patent: 5780346 (1996-12-01), Arghavani et al.

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