Negative tone double patterning method

Details Negative tone double patterning method Negative tone double patterning method

2008-09-05

2010-10-26

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S725000, C438S781000, C430S312000, C257SE21236, C257SE21259, C257SE21492

Reexamination Certificate

active

07820550

ABSTRACT:
A method of forming a pattern on a wafer is provided. The method includes applying a photoresist on the wafer and exposing the wafer to define a first pattern on the photoresist. The method also includes exposing the wafer to define a second pattern on the photoresist, wherein each of the first and second patterns comprises unexposed portions of the photoresist and developing the wafer to form the first and second patterns on the photoresist, wherein the first and second patterns are formed by removing the unexposed portions of the photoresist.

REFERENCES:
patent: 5320932 (1994-06-01), Haraguchi et al.
Joost Bekaert, “Contact Layer Printing at 0.28 k1by Means of Double Line Exposure and Negative Tone Development”, IMEC FujiFilm, 5thInternational Symposium on Immersion Lithography Extensions, The Hague, Sep. 23, 2008 pp. 1-37.

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