Nand-type non-volatile memory device

Details Nand-type non-volatile memory device Nand-type non-volatile memory device

2007-01-10

2009-06-30

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S777000, C257SE29137, C257SE27100, C257SE29117, C257SE21372, C257SE21411

Reexamination Certificate

active

07554140

ABSTRACT:
Provided is a NAND-type nonvolatile memory device and method of forming the same. In the method, a plurality of cell layers are stacked on a semiconductor substrate. Seed contact holes for forming a semiconductor pattern included in a stacked cell are formed at regular distance. At this time, the seed contact holes are arranged such that a bit line plug or a source line pattern is disposed at a center between one pair of seed contact holes adjacent to each other.

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