NAND flash memory devices and methods of fabricating the same

Details NAND flash memory devices and methods of fabricating the same NAND flash memory devices and methods of fabricating the same

2008-07-03

2009-10-27

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000

Reexamination Certificate

active

07608507

ABSTRACT:
A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.

REFERENCES:
patent: 7233522 (2007-06-01), Chen et al.
patent: 2006/0018181 (2006-01-01), Matsunaga et al.
patent: 05-167080 (1993-07-01), None
patent: 11-145431 (1999-05-01), None
patent: 2001-308209 (2001-11-01), None

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