Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-15
2005-11-15
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S153000, C438S969000
Reexamination Certificate
active
06964892
ABSTRACT:
An N-channel metal oxide semiconductor (NMOS) driver circuit (and method for making the same), includes a boost gate stack formed on a substrate and having a source and drain formed by a low concentration implantation, and an N-driver coupled to the boost gate stack.
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Clevenger Lawrence A.
Divakaruni Rama
Hsu Louis Lu-Chen
Li Yu-jun
Cheung, Esq. Wan Yee
International Business Machines - Corporation
Lindsay Jr. Walter L.
McGinn & Gibb PLLC
Niebling John F.
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