Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – By differential heating
Reexamination Certificate
2007-01-25
2009-12-08
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
By differential heating
C438S535000, C438S530000, C257SE21473, C257SE21454
Reexamination Certificate
active
07629275
ABSTRACT:
A method of forming an integrated circuit is provided. The method includes performing a multiple-time flash anneal process to a wafer, wherein the multiple-time flash anneal process comprises preheating the wafer to a first preheat temperature; performing a first flash on the wafer with a first flash energy; preheating the wafer to a second preheat temperature; and performing a second flash on the wafer with a second flash energy.
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Chen Chi-Chun
Chen Jennifer
Tao Hun-Jan
Everhart Caridad M
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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