Multiple-time flash anneal process

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – By differential heating

Reexamination Certificate

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C438S535000, C438S530000, C257SE21473, C257SE21454

Reexamination Certificate

active

07629275

ABSTRACT:
A method of forming an integrated circuit is provided. The method includes performing a multiple-time flash anneal process to a wafer, wherein the multiple-time flash anneal process comprises preheating the wafer to a first preheat temperature; performing a first flash on the wafer with a first flash energy; preheating the wafer to a second preheat temperature; and performing a second flash on the wafer with a second flash energy.

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patent: 2005/0003621 (2005-01-01), Nakaoka et al.
patent: 2006/0088969 (2006-04-01), Jain
patent: 2006/0121680 (2006-06-01), Tanaka
patent: 2006/0228897 (2006-10-01), Timans
patent: 2008/0273867 (2008-11-01), Camm et al.

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