Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-10-14
1999-11-09
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438530, H01L 21336
Patent
active
059813474
ABSTRACT:
A method for forming a metal oxide semiconductor field effect transistor (MOSFET). There is first provided a semiconductor substrate. There is then formed upon the semiconductor substrate a gate dielectric layer. There is then formed upon the gate dielectric layer a gate electrode. There is then implanted into the semiconductor substrate while employing the gate electrode as a mask a pair of unactivated source/drain regions at a pair of opposite edges of the gate electrode, where the gate dielectric layer, the gate electrode and the pair of unactivated source/drain regions form an unactivated metal oxide semiconductor field effect transistor (MOSFET). There is then annealed thermally through a first thermal annealing method the semiconductor substrate to form from the pair of unactivated source/drain regions a pair of activated source/drain regions, where the gate dielectric layer, the gate electrode and the pair of activated source/drain regions form an activated metal oxide semiconductor field effect transistor (MOSFET). Finally, there is then annealed thermally through a subsequent second thermal annealing method the semiconductor substrate to form from the activated metal oxide semiconductor field effect transistor (MOSFET) a hot carrier effect (HCE) resistant activated metal oxide semiconductor field effect transistor (MOSFET).
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Chu Li-Huan
Kuo So-Wen
Wu Lin-June
Ackerman Stephen B.
Chaudhari Chandra
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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