Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-03
2005-05-03
Tokar, Michael (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000
Reexamination Certificate
active
06887749
ABSTRACT:
Methods are provided for fabricating multiple oxide thicknesses on a single silicon wafer. Methods are provided to form multiple gate oxide thicknesses on a single chip wherein the chip can include circuitry encompassing a range of technologies including but not limited to the memory and logic technologies. These methods can be used in conjunction with existing fabrication and processing techniques with minimal or no added complexity. Methods for forming a semiconductor device include forming a top layer of SiO2on a top surface of a silicon wafer. A trench layer of SiO2is also formed on a trench wall of the silicon wafer. The trench wall of the silicon wafer has a different order plane-orientation than the top surface. Additionally, the formation of the top and trench layers of SiO2are such that a thickness of the top layer is different from a thickness of the trench layer.
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Forbes Leonard
Noble Wendell P.
Kilday Lisa
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
Tokar Michael
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