Multiple-gate transistors formed on bulk substrates

Details Multiple-gate transistors formed on bulk substrates Multiple-gate transistors formed on bulk substrates

2007-02-06

2007-02-06

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S283000, C257S329000, C257S331000

Reexamination Certificate

active

10669395

ABSTRACT:
In one aspect, the present invention teaches a multiple-gate transistor130that includes a semiconductor fin134formed in a portion of a bulk semiconductor substrate132. A gate dielectric144overlies a portion of the semiconductor fin134and a gate electrode146overlies the gate dielectric144. A source region138and a drain region140are formed in the semiconductor fin134oppositely adjacent the gate electrode144. In the preferred embodiment, the bottom surface150of the gate electrode146is lower than either the source-substrate junction154or the drain-substrate junction152.

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