Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1997-07-10
2000-09-12
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438673, 438640, 438782, 438701, 438713, H01L 2131
Patent
active
061177857
ABSTRACT:
A method for forming a microelectronic device includes the steps of forming a spin-on-glass layer on a microelectronic substrate, and forming a capping layer on the spin-on-glass layer opposite the substrate. A masking layer is formed on the capping layer opposite the substrate wherein the masking layer exposes portions of the capping layer and the spin-on-glass layer. The exposed portions of said capping layer and the spin-on-glass layer are etched using the masking layer as an etch mask to thereby form a contact hole through the capping layer and the spin-on-glass layer wherein protruding edge portions of the capping layer extend beyond the spin-on-glass layer adjacent the contact hole. The mask layer is removed, and the protruding edge portions of the capping layer are removed from adjacent the contact hole.
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Choi Ji-hyun
Goo Ju-seon
Hwang Byung-keun
Lee Hae-jeong
Bowers Charles
Nguyen Thanh
Samsung Electronics Co,. Ltd.
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