Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2011-04-12
2011-04-12
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S042000, C438S053000, C257S619000, C257SE21520
Reexamination Certificate
active
07923379
ABSTRACT:
A method of forming an integrated circuit structure includes forming an opening in a substrate, with the opening extending from a top surface of the substrate into the substrate. The opening is filled with a filling material until a top surface of the filling material is substantially level with the top surface of the substrate. A device is formed over the top surface of the substrate, wherein the device includes a storage opening adjoining the filling material. A backside of the substrate is grinded until the filling material is exposed. The filling material is removed from the channel until the storage opening of the device is exposed.
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Cheng Chun-Ren
Lee Jiou-Kang
Peng Jung-Huei
Tsai Shang-Ying
Wu Ting-Hau
Munoz Andres
Pham Thanh V
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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