Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-05-17
2005-05-17
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192150, C438S685000, C438S687000, C205S186000
Reexamination Certificate
active
06893541
ABSTRACT:
A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes, a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.
REFERENCES:
patent: 5658442 (1997-08-01), Van Gogh et al.
patent: 5690795 (1997-11-01), Rosenstein et al.
patent: 5736021 (1998-04-01), Ding et al.
patent: 5795451 (1998-08-01), Tan et al.
patent: 5830330 (1998-11-01), Lantsman
patent: 5879523 (1999-03-01), Wang et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6080286 (2000-06-01), Okuda et al.
patent: 6136707 (2000-10-01), Cohen
patent: 6146517 (2000-11-01), Hoinkis
patent: 6221765 (2001-04-01), Ueno
patent: 6261946 (2001-07-01), Iacoponi et al.
patent: 6582569 (2003-06-01), Chiang et al.
patent: 0 878 843 (1998-11-01), None
patent: 08264447 (1996-10-01), None
patent: 10-152774 (1998-06-01), None
patent: 11074225 (1999-03-01), None
Asamaki et al., “Copper self-sputtering by planar magnetron”,Jpn. J. Appl. Phys., vol. 33, part 1, No. 5a, May 1994, pp. 2500-2503.
Posadowski et al., “sustained self-sputtering using a direct current magnetron source”Journal Vaccum Science Technology A, vol. 11, No. 6, Nov./Dec. 1993, pp. 2980-2984.
Radzimski et al., “Directional copper deposition using de magnetron self-sputtering”,J. Vac. Sci. Technol. B, vol. 16, No. 3, May/Jun. 1998, pp. 1102-1106.
Chiang Tony P.
Cong Yu D.
Ding Peijun
Fu Jianming
Tang Howard H.
Applied Materials Inc.
Guenzer Charles S.
McDonald Rodney G.
LandOfFree
Multi-step process for depositing copper seed layer in a via does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-step process for depositing copper seed layer in a via, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-step process for depositing copper seed layer in a via will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3367897