Multi-step plasma doping with improved dose control

Details Multi-step plasma doping with improved dose control Multi-step plasma doping with improved dose control

2007-02-16

2010-10-26

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C257SE21143

Reexamination Certificate

active

07820533

ABSTRACT:
A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition impact a surface of the substrate thereby exposing the substrate to a first dose. The first plasma condition transitions to a second plasma condition. The substrate is biased so that ions in the plasma having the second plasma condition impact the surface of the substrate thereby exposing the substrate to a second dose. The first and second plasma conditions are chosen so that the first and second doses combine to achieve a predetermined distribution of dose across at least a portion of the substrate.

REFERENCES:
patent: 4828369 (1989-05-01), Hotomi
patent: 5279669 (1994-01-01), Lee
patent: 5330800 (1994-07-01), Schumacher et al.
patent: 5449920 (1995-09-01), Chan
patent: 5540824 (1996-07-01), Yin et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5711812 (1998-01-01), Chapek et al.
patent: 5911832 (1999-06-01), Denholm et al.
patent: 6051073 (2000-04-01), Chu et al.
patent: 6083363 (2000-07-01), Ashtiani et al.
patent: 6087615 (2000-07-01), Schork et al.
patent: 6113735 (2000-09-01), Chu et al.
patent: 6162323 (2000-12-01), Koshimizu
patent: 6269765 (2001-08-01), Chu et al.
patent: 6359310 (2002-03-01), Gonzalez et al.
patent: 6433553 (2002-08-01), Goeckner et al.
patent: 6500496 (2002-12-01), Goeckner et al.
patent: 6518190 (2003-02-01), Lill et al.
patent: 6734446 (2004-05-01), Yamazaki et al.
patent: 6849857 (2005-02-01), Ichiki et al.
patent: 2001/0046566 (2001-11-01), Chu et al.
patent: 2003/0079688 (2003-05-01), Walther et al.
patent: 2003/0082891 (2003-05-01), Walther
patent: 2003/0101935 (2003-06-01), Walther
patent: 2003/0116090 (2003-06-01), Chu et al.
patent: 2003/0201722 (2003-10-01), Appleyard
patent: 2004/0016402 (2004-01-01), Walther et al.
patent: 2004/0036038 (2004-02-01), Okumura et al.
patent: 2005/0205212 (2005-09-01), Singh et al.
patent: 2006/0236931 (2006-10-01), Singh et al.
patent: 2007/0166846 (2007-07-01), Sasaki et al.
patent: 0 810 816 (1997-12-01), None
patent: 1596427 (2005-11-01), None
patent: 2005076328 (2005-08-01), None
patent: 2006064772 (2006-06-01), None
Chu, Recent Developments and Applications of Plasma Immersion Ion Implantation, J. Vac. Sci. Technol. B., Jan./Feb. 2004, pp. 289-296, vol. 22, No. 1, American Vacuum Society, 2004.
Cheung, Nathan W., Plasma Immersion Ion Implantation for ULSI Devices, p. 337, University of California, Berkeley, CA, USA., 1995.
Yu, Crid, et al., Trench Doping Conformality by Plasma Immersion Ion Implantation(PIII): IEEE, 1994, pp. 196-198, University of California, Berkeley, CA, USA.
Lee, et al, Plasma Immersion Ion Implantation As an Alternative Deep Trench Buried-Plate Doping Technology, IEEE, 2000, pp. 460-463.
Gupta, et al, Conformal Doping Apparatus and Method, U.S. Appl. No. 11/163,303, filed Oct. 13, 2005.
Gupta, et al., Conformal Doping Apparatus and Method, U.S. Appl. No. 11/163,307, filed Oct. 13, 2005.
Walther, Plasma Doping With Electronically Controllable Implant Angle, U.S. Appl. No. 11/566,418, filed Dec. 4, 2006.
Persing, Plasma Immersion Ion Source With Low Effective Antenna Voltage, U.S. Appl. No. 11/617,785, filed Dec. 29, 2006.
Hertel, et al., Plasma Source With Liner For Reducing Metal Contamination, U.S. Appl. No. 11/623,739, filed Jan. 16, 2007.
Sasaki Y, et al.: “B2H6 Plasma Doping with In-Situ He Pre-Amorphization;” VLSI Technology, 2004; Digest of Technical Papers, 2004 Symposium on Honolulu, HI: Jun. 15-17, 2004; Piscataway, NJ, IEEE, Jun. 15, 2004; pp. 180-181.

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