Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-22
2010-10-19
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S346000, C257SE21431, C438S503000
Reexamination Certificate
active
07816217
ABSTRACT:
A method for manufacturing a semiconductor device includes providing a substrate comprising silicon, cleaning the substrate, performing a first low pressure chemical vapor deposition (LPCVD) process using a first source gas to selectively deposit a seeding layer of silicon (Si) over the substrate, performing a second LPCVD process using a second source gas to selectively deposit a first layer of silicon germanium (SiGe) over the layer of Si, the second source gas including hydrochloride at a first flow rate, and performing a third LPCVD process using a third source gas including hydrochloride at a second flow rate. The first flow rate is substantially lower than the second flow rate.
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Chang Chih-Chien
Lee Tze-Liang
Lin Li-Te S.
Tsai Pang-Yen
Finnegan Henderson Farabow Garrett & Dunner LLP
Fulk Steven J
Taiwan Semiconductor Manufacturing Company , Ltd.
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