Multi-step epitaxial process for depositing Si/SiGe

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S346000, C257SE21431, C438S503000

Reexamination Certificate

active

07816217

ABSTRACT:
A method for manufacturing a semiconductor device includes providing a substrate comprising silicon, cleaning the substrate, performing a first low pressure chemical vapor deposition (LPCVD) process using a first source gas to selectively deposit a seeding layer of silicon (Si) over the substrate, performing a second LPCVD process using a second source gas to selectively deposit a first layer of silicon germanium (SiGe) over the layer of Si, the second source gas including hydrochloride at a first flow rate, and performing a third LPCVD process using a third source gas including hydrochloride at a second flow rate. The first flow rate is substantially lower than the second flow rate.

REFERENCES:
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 7250351 (2007-07-01), Furukawa et al.
patent: 2003/0005881 (2003-01-01), Shin
patent: 2005/0012146 (2005-01-01), Murthy et al.
patent: 2005/0252443 (2005-11-01), Tsai et al.
State Intellectual Property Office of The People's Republic of China, first Office Action, May 9, 2008, three pages.
State Intellectual Property Office of The People's Republic of China, second Office Action, Oct. 24, 2008, three pages.

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