Multi-bit multi-level non-volatile memory device and methods...

Details Multi-bit multi-level non-volatile memory device and methods... Multi-bit multi-level non-volatile memory device and methods...

2006-04-19

2009-10-13

Maldonado, Julio J. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257S390000, C257S317000, C257SE21681, C257SE27102, C257SE29309

Reexamination Certificate

active

07602010

ABSTRACT:
In a non-volatile memory device allowing multi-bit and/or multi-level operations, and methods of operating and fabricating the same, the non-volatile memory device comprises, in one embodiment: a semiconductor substrate, doped with impurities of a first conductivity type, which has one or more fins defined by at least two separate trenches formed in the substrate, the fins extending along the substrate in a first direction; pairs of gate electrodes formed as spacers at sidewalls of the fins, wherein the gate electrodes are insulated from the semiconductor substrate including the fins and extend parallel to the fins; storage nodes between the gate electrodes and the fins, and insulated from the gate electrodes and the semiconductor substrate; source regions and drain regions, which are doped with impurities of a second conductivity type, and are separately formed at least at surface portions of the fins and extend across the first direction of the fins; and channel regions corresponding to the respective gate electrodes, formed at least at surface regions of the sidewalls of the fins between the source and the drain regions.

REFERENCES:
patent: 5350937 (1994-09-01), Yamazaki et al.
patent: 5460988 (1995-10-01), Hong
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6670669 (2003-12-01), Kawamura
patent: 2002/0145161 (2002-10-01), Miura et al.
patent: 2004/0169219 (2004-09-01), Miida et al.
patent: 2005/0280094 (2005-12-01), Forbes
patent: 2004-214495 (2004-07-01), None

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