Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-11-12
2010-10-12
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S230080, C365S238500, C365S239000
Reexamination Certificate
active
07813187
ABSTRACT:
A method for programming a flash memory device including a plurality of memory cells, each storing multi-bit data, includes reading data from selected memory cells. An error of the read data is detected and corrected. Input program data is programmed into the selected memory cells based upon the error-corrected read data.
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Dinh Son
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
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