Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-05-22
2007-05-22
Weiss, Howard (Department: 2814)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C257S295000
Reexamination Certificate
active
11053379
ABSTRACT:
A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.
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Chiang Kuo-Ching
Liu Chi-Wen
Tang Denny D.
Tseng Horng-Huei
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