MOS transistor adopting titanium-carbon-nitride gate electrode a

Details MOS transistor adopting titanium-carbon-nitride gate electrode a MOS transistor adopting titanium-carbon-nitride gate electrode a

1996-03-21

1998-08-18

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, 438685, H01L 2128

Patent

active

057958173

ABSTRACT:
A MOS transistor employing a titanium-carbon-nitride (TiCN) gate electrode is provided. The MOS transistor has a gate insulating film, a gate electrode, and a source/drain region on a semiconductor substrate. The gate electrode is formed of a single TiCN film or a double film having a TiCN film and a low-resistant metal film formed thereon. The TiCN gate electrode exhibits a low resistance of about 80-100 .mu..OMEGA.-cm and can control variations in Fermi energy level.

REFERENCES:
patent: 4823182 (1989-04-01), Okumura
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5364803 (1994-11-01), Lur et al.
patent: 5496762 (1996-03-01), Sandhu et al.
patent: 5561326 (1996-10-01), Ito et al.
patent: 5604140 (1997-02-01), Byun

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