4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Field effect device
  6. Having insulated electrode

Choong-ryul Paik

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Manufacturing method of target for sputtering

Powder metallurgy processes – Powder metallurgy processes with heating or sintering – Metal and nonmetal in final product
Patent

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Mos transistor adopting titanium-carbon-nitride gate electrode a

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOS transistor adopting titanium-carbon-nitride gate electrode a

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
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Profile ID: LFUS-PAI-P-876764

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