Mos transistor adopting titanium-carbon-nitride gate electrode a

Details Mos transistor adopting titanium-carbon-nitride gate electrode a Mos transistor adopting titanium-carbon-nitride gate electrode a

1997-10-29

1999-10-12

Niebling, John F.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257407, 257763, 257408, 438197, 438585, 438588, 438592, H01L 2976

Patent

active

059659114

ABSTRACT:
A MOS transistor employing a titanium-carbon-nitride (TiCN) gate electrode is provided. The MOS transistor has a gate insulating film, a gate electrode, and a source/drain region on a semiconductor substrate. The gate electrode is formed of a single TiCN film or a double film having a TiCN film and a low-resistant metal film formed thereon. The TiCN gate electrode exhibits a low resistance of about 80-100 .mu..OMEGA.-cm and can control variations in Fermi energy level.

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patent: 5496762 (1996-03-01), Sandhu et al.
patent: 5561326 (1996-10-01), Ito et al.
patent: 5604140 (1997-02-01), Byun

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