Monatomic boron ion source and method

Details Monatomic boron ion source and method Monatomic boron ion source and method

2005-06-14

2005-06-14

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

Reexamination Certificate

active

06905947

ABSTRACT:
Monotomic boron ions for ion implantation are supplied from decaborane vapor. The vapor is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.

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patent: 001093149 (2001-04-01), None
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