Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-10
1998-12-22
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438632, 438637, 438656, 438663, H01L 21283
Patent
active
058519122
ABSTRACT:
An method for the fabrication of an ohmic, low resistance contact to heavily doped silicon is described using a CVD deposited tungsten plug provided with Ti/TiN barrier metallurgy. The method provides for surface planarization using a borophosphosilicate glass insulator deposited on the silicon. After the glass is flowed to planarize its surface, contact holes are patterned in the glass and the exposed silicon substrate contacts are implanted. Instead of activating the implant with a rapid-thermal-anneal at this point the Ti/TiN barrier metallurgy is applied first followed by the anneal. This provides support for the glass at the upper corners of the contact opening during the anneal and thus prevents them from deforming and encroaching into the contact hole opening. By using the Ti/TiN metallurgy to support the glass, higher annealing temperatures are permitted, providing not only for adequate dopant activation but also for a lower contact resistance and improved bonding of the metallurgy to the silicate glass.
REFERENCES:
patent: 5102826 (1992-04-01), Ohshima et al.
patent: 5227191 (1993-07-01), Nagashima
patent: 5238872 (1993-08-01), Thalapaneni
patent: 5272112 (1993-12-01), Schmitz et al.
patent: 5302549 (1994-04-01), Santangelo et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5364817 (1994-11-01), Lur et al.
patent: 5422308 (1995-06-01), Nicholls et al.
patent: 5510296 (1996-04-01), Yen et al.
patent: 5554565 (1996-09-01), Liaw et al.
Wolf, S., Silicon Processing for the VLSI Era, Lattice Press, vol. 2, 1990, pp. 194-199, 245-252.
Wolf, S., Silicon Processing, vol. 1, 1986, Lattice Press, pp. 56-58, 187-191, 303-308, 325-327.
El-Kareh, B., Fundamentals of Semiconductor Processing Technologies, Kluwer Academic Publishers, 1995, pp. 556-557.
Wolf, S., et al., Silicon Processing for the VLSI Era, vol. 1, Process Technology, Lattice Press, 1986, pp. 244, 307.
Lee Jin-Yuan
Liaw Jhon-Jhy
Teng Ming-Chang
Ackerman Stephen B.
Quach T. N.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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