Minimizing degradation of SiC bipolar semiconductor devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S095000, C117S105000

Reexamination Certificate

active

11560575

ABSTRACT:
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.

REFERENCES:
patent: 3988762 (1976-10-01), Cline et al.
patent: 3988771 (1976-10-01), Krishna
patent: 3988772 (1976-10-01), Krishna
patent: 4912063 (1990-03-01), Davis et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 5093576 (1992-03-01), Edmond et al.
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5313078 (1994-05-01), Fujii et al.
patent: 5329141 (1994-07-01), Suzuki et al.
patent: 5814546 (1998-09-01), Hermansson
patent: 6054706 (2000-04-01), Razeghi
patent: 6100111 (2000-08-01), Konstantinov
patent: 6338629 (1994-12-01), None
Philip g. Neudec et al., 2000 V 6H-SiC p-n Junction Diodes Grown by Chemical Vapor Deposition, Applied Physics Letters, Mar. 14, 1994, pp. 1386-1388, vol. 64, No. 11.
Sei-Hyung Ryu et al., 1800 V NPN Bipolar Junction Transistors in 4H-SiC, IEEE Electron Device Letters, Mar. 2001, pp. 124-126, vol. 22 No. 3, IEEE Inc. New York.
Sei-Hyung Ryu et al., 3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC, IEEE Electron Device Letters, Mar. 2001, pp. 127-129, vol. 22, No. 3, IEEE Inc. New York.
J.W. Palmour et al., Silicon Carbide for Power Devices, Power Semiconductor Devices and IC's, IEEE Intl. Symposium on Weimar, Germany, May 26-29, 1997, pp. 25-32, IEEE Inc. NY.
J.P. Bergman et al., Defects in 4H Silicon Carbide, 21st Intl. Conference on Defects in Semiconductors, Giessen, Germany, Jul. 16-20, 2001, Physica B, Dec. 2001, p. 675-679, vol. 308-310.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Minimizing degradation of SiC bipolar semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Minimizing degradation of SiC bipolar semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Minimizing degradation of SiC bipolar semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3955997

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.