Microwave plasma processing process and apparatus

Details Microwave plasma processing process and apparatus Microwave plasma processing process and apparatus

1996-11-15

1999-06-08

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041921, 20419212, 20419232, 20429838, 156345, 118723MW, 427553, 427575, 427595, 216 69, H01L 2100, C23C 1650

Patent

active

RE0362247

ABSTRACT:
A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.

REFERENCES:
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patent: 4265730 (1981-05-01), Hirose et al.
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4316791 (1982-02-01), Taillet
patent: 4330384 (1982-05-01), Okudaira et al.
patent: 4339326 (1982-07-01), Hirose et al.
patent: 4431473 (1984-02-01), Okano et al.
patent: 4462863 (1984-07-01), Nishmatsu et al.
patent: 4512868 (1985-04-01), Fujimura
patent: 4563240 (1986-01-01), Shibata et al.
European Search Report, The Hague, Feb. 10, 1988.
Kraus, John D., Electromagnetics, 1973 pp. 482-485.

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