Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-06-26
2000-01-18
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438723, 438743, 216 69, 216 79, 156345, H01L 2100
Patent
active
060157615
ABSTRACT:
A microwave-activated plasma process for etching dielectric layers (20) on a substrate (25) with excellent control of the shape and cross-sectional profile of the etched features (40), high etch rates, and good etching uniformity, is described. A process gas comprising (i) fluorocarbon gas (preferably CF.sub.4), (ii) inorganic fluorinated gas (preferably NF.sub.3), and (iii) oxygen, is used. The process gas is introduced into a plasma zone (55) remote from a process zone (60) and microwaves are coupled into the plasma zone (55) to form a microwave-activated plasma. The microwave-activated plasma is introduced into the process zone (60) to etch the dielectric layer (20) on the substrate (25) with excellent control of the shape of the etched features.
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Brown William
Herchen Harald
Merry Walter Richardson
Welch Michael D.
Applied Materials Inc.
Janah Ashok
Powell William
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