Microprobe tips and methods for making

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S689000, C257SE21159, C257SE21523

Reexamination Certificate

active

11029169

ABSTRACT:
Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in over exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of a the tip material around carefully sized placed etching shields, via hot pressing, and the like.

REFERENCES:
patent: 6692145 (2004-02-01), Gianchandani et al.
patent: 6948940 (2005-09-01), Lindsey et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microprobe tips and methods for making does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microprobe tips and methods for making, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microprobe tips and methods for making will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3742892

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.